The M29W102B is a 1 Mbit (64Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
The blocks in the memory are asymmetrically arranged, see Tables 3 and 4, Block Addresses. The first or last 32 Kwords have been divided into four additional blocks. The 8 Kword Boot Block can be used for small initialization code to start the microprocessor, the two 4 Kword Parameter Blocks can be used for parameter storage and the remaining 16 Kwords are a small Main Block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.
The memory is offered in a TSOP40 (10 x 14mm) package and it is supplied with all the bits erased (set to '1').
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SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONSACCESS TIME: 50nsPROGRAMMING TIME 10s per Word typical5 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) 2 Parameter and 2 Main BlocksPROGRAM/ERASE CONTROLLER Embedded Word Program algorithm Embedded Multi-Block/Chip Erase algorithm Status Register Polling and Toggle BitsERASE SUSPEND and RESUME MODES Read and Program another Block during Erase SuspendUNLOCK BYPASS PROGRAM COMMAND Faster Production/Batch ProgrammingTEMPORARY BLOCK UNPROTECTION MODELOW POWER CONSUMPTION Standby and Automatic Standby100,000 PROGRAM/ERASE CYCLES per BLOCKM28F102 COMPATIBLE Pin-out and Read Mode20 YEARS DATA RETENTION Defectivity below 1 ppm/yearELECTRONIC SIGNATURE Manufacturer Code: 0020h Top Device Code M29W102BT: 0099h Bottom Device Code M29W102BB: 0098h
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Symbol |
Parameter |
Value |
Unit |
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TA |
Ambient Operating Temperature (Temperature Range Option 1) |
0 to 70 |
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| Ambient Operating Temperature (Temperature Range Option 6) |
-40 to 85 |
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TBIAS |
Temperature Under Bias |
-50 to 125 |
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TSTG |
Storage Temperature |
65 to 150 |
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VIO(2) |
Input or Output Voltage |
0.6 to 4 |
V |
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VCC |
Supply Voltage |
0.6 to 4 |
V |
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VID |
Identification Voltage |
0.6 to 13.5 |
V |
Post a Buying Lead
Required Field 
